| PART |
Description |
Maker |
| 2SA1363 |
500mW SMD PNP transistor, maximum rating: -16V Vceo, -2A Ic, 150 to 800 hFE. Complementary 2SC3443
FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SA1946 |
500mW SMD PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5212
FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| CMBT200 CMBT200A |
0.350W General Purpose PNP SMD Transistor. 45V Vceo, 0.500A Ic, 100 hFE.
0.350W General Purpose PNP SMD Transistor. 45V Vceo, 0.500A Ic, 100 - 350 hFE.
PNP EPITAXIAL PLANAR SILICON TRANSISTOR
|
CDIL[Continental Device India Limited]
|
| 2SC3360 |
High DC current gain.hFE=90 to 450 High voltage VCEO=200V
|
TY Semiconductor Co., Ltd
|
| CMBT2369 |
0.250W General Purpose NPN SMD Transistor. 15V Vceo, 0.500A Ic, 20 hFE.
|
Continental Device India Limited
|
| CMBT2484 |
0.225W General Purpose NPN SMD Transistor. 60V Vceo, 0.050A Ic, 250 hFE.
|
Continental Device India Limited
|
| CMBT4403 |
0.250W General Purpose PNP SMD Transistor. 40V Vceo, 0.600A Ic, 20 hFE. Complementary CMBT4401
|
Continental Device India Limited
|
| CMBT4126 |
0.350W General Purpose PNP SMD Transistor. 25V Vceo, 0.200A Ic, 60 hFE. Complementary CMBT4124
|
Continental Device India Limited
|
| 2SC5383 |
125mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 150 to 800 hFE.
|
Isahaya Electronics Corporation
|
| 2SC4102 |
High breakdown voltage.(VCEO = 120V)
|
TY Semiconductor Co., Ltd
|
| PZTA44 PZTA44_4 PZTA44115 |
NPN high-voltage transistor - fT min: 20 MHz; hFE max:>40 ; hFE min: 40 ; I<sub>C</sub> max: 300 mA; Polarity: NPN ; Ptot max: 1350 mW; VCEO max: 400 V; Package: SOT223 (SC-73); Container: Tape reel smd
From old datasheet system
|
NXP SEMICONDUCTORS
PHILIPS[Philips Semiconductors]
|
